The following is a list of frequently asked questions (FAQ) about our Gain Chip.
Is the active layer structure of the gain chip and BOA the same?
The active layer structure is basically the same, but there is a difference in the waveguide structure: the gain chip uses a bent waveguide structure, while the BOA uses an angled waveguide structure.
Do the gain peaks and bandwidths match the ASE spectrum?
Basically, the gain peak and bandwidth are correlated with the ASE spectrum, but do not match exactly. The gain peak is usually located on the long wavelength side of the ASE peak.
Does the gain chip for the C+L-band cover a wider bandwidth than for the C-band or L-band?
The C+L-band gain chip does not have a wide bandwidth, but the wavelength is adjusted to cover the region between the C-band and L-band.
How high is the wall-plug efficiency?
The wall-plug efficiency, meaning the power conversion efficiency, is calculated from the current–optical output characteristic with external cavity resonance and therefore depends on the operating conditions. In our experimental example, it is estimated to be about 15%.
How do the device characteristics change as the operating temperature increases?
As the temperature increases, the gain peak wavelength becomes longer and the gain decreases.
What is the optical output exit angle?
It is about 20º to the perpendicular of the facet.
In addition to the sub-mount type, can you supply other types, such as bare chips?
Standard products are sub-mounted, and we can also consider TO packages, mounting on different carriers, and hermetically sealed packages to meet customers' requirements. Please contact us for details, including support for bare chips.
Is there a way to prevent mode hopping at wavelength sweeping?
The optical length of the chip can be adjusted by changing the current and chip temperature to suppress mode hopping.